Nanoscale Memories in Chalcogenide Glass Films.
Tomas Wagner1*, Bo Zhang1, Silvie Valkova1,
Max Fraenkl1, Milos Krbal1, Miloslav Frumar1,
A range of material systems exists in which nanoscale ionic transport and redox reactions
provide the essential for switching as platform for reconfigurable electronic devices and
biological like computing. One class relies on mobile cations, which are easily created
by electrochemical oxidation of the corresponding electrode metal, transported in the
insulating layer, and reduced at the inert counter electrode. These devices are termed
electrochemical metallization memories (EMC) or conductive bridge random access
memories . The material candidates for electrolytes in such devides have been recently
studied. They are amorphous chalcogenides [2, 3] and also oxides
and others ) containing metal elements (Ag, Cu) or their compounds
S, CuS) and
gaining some portion of ionic conductivity and becoming mixed ionic-electronic conductors [3-8].
The aim of this work is to present our current results on syntesis and resistive switching
of chalcogenide based nanowire array cells and planparalel cells.
The authors thank project KONTAKT II (CR-USA) LH14059 for financial support.
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1 Department of General and Inorganic Chemistry, Faculty of Chemical Technology,
and Centre for Materials Science, University of Pardubice, Cs. Legion's Sq. 565,
Pardubice 532 10, Czech Republic.
2 Department. of Physics & Astronomy, Athens, USA